Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement

Feng Yan; Piero Migliorato; Tatsuya Shimoda

doi:10.1063/1.1564635

Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement

Feng Yan
, Piero Migliorato
, Tatsuya Shimoda

Research output: Journal article publication › Journal article › Academic research › peer-review

6 Citations (Scopus)

Abstract

A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.

Original language	English
Pages (from-to)	2062-2064
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1564635
Publication status	Published - 31 Mar 2003
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1564635

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title = "Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement",

abstract = "A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.",

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N2 - A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.

AB - A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.

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DO - 10.1063/1.1564635

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JF - Applied Physics Letters

IS - 13

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Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement

Abstract

ASJC Scopus subject areas

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