Abstract
A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.
Original language | English |
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Pages (from-to) | 2062-2064 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 82 |
Issue number | 13 |
DOIs | |
Publication status | Published - 31 Mar 2003 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)