Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement

Feng Yan, Piero Migliorato, Tatsuya Shimoda

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)

Abstract

A study was performed on the trap processes in polycrystalline silicon thin film transistors. A small ac voltage was superimposed on a dc gate voltage and the ac current was measured at the source. The trap energy, capture cross section and trap density were determined by combining the ac current measurement with a low frequency capacitance measurement.
Original languageEnglish
Pages (from-to)2062-2064
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number13
DOIs
Publication statusPublished - 31 Mar 2003
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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