Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2stack as the tunnel dielectric

Shiye Wang; Weili Liu; Qing Wan; Jiyan Dai; P. F. Lee; Luo Suhua; Qinwo Shen; Miao Zhang; Zhitang Song; Chenglu Lin

doi:10.1063/1.1864254

Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO₂/SiO₂stack as the tunnel dielectric

Shiye Wang, Weili Liu, Qing Wan, Jiyan Dai, P. F. Lee, Luo Suhua, Qinwo Shen, Miao Zhang, Zhitang Song, Chenglu Lin

Research output: Journal article publication › Journal article › Academic research › peer-review

21 Citations (Scopus)

Abstract

A metal-insulator-semiconductor (MIS) structure containing a HfO2control gate, a Ge nanocrystal-embedded HfO2dielectric and a HfO2/SiO2stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2was achieved.

Original language	English
Article number	113105
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	11
DOIs	https://doi.org/10.1063/1.1864254
Publication status	Published - 14 Mar 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

More information

10.1063/1.1864254

http://hdl.handle.net/10397/4880

Cite this

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abstract = "A metal-insulator-semiconductor (MIS) structure containing a HfO2control gate, a Ge nanocrystal-embedded HfO2dielectric and a HfO2/SiO2stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2was achieved.",

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AU - Wang, Shiye

AU - Liu, Weili

AU - Wan, Qing

AU - Dai, Jiyan

AU - Lee, P. F.

AU - Suhua, Luo

AU - Shen, Qinwo

AU - Zhang, Miao

AU - Song, Zhitang

AU - Lin, Chenglu

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AB - A metal-insulator-semiconductor (MIS) structure containing a HfO2control gate, a Ge nanocrystal-embedded HfO2dielectric and a HfO2/SiO2stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2was achieved.

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Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO₂/SiO₂stack as the tunnel dielectric

Abstract

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