Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2/SiO2stack as the tunnel dielectric

Shiye Wang, Weili Liu, Qing Wan, Jiyan Dai, P. F. Lee, Luo Suhua, Qinwo Shen, Miao Zhang, Zhitang Song, Chenglu Lin

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21 Citations (Scopus)


A metal-insulator-semiconductor (MIS) structure containing a HfO2control gate, a Ge nanocrystal-embedded HfO2dielectric and a HfO2/SiO2stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2/SiO2stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current-voltage (I-V) and capacitance-voltage (C-V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm-2was achieved.
Original languageEnglish
Article number113105
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 14 Mar 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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