Abstract
Bi/Bi1-xSbxmultiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 °C in the MBE chamber with vacuum of 10-10torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 °C. The Bi/Bi1-xSbxmultilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130°C. As-deposited samples were characterized by reflection high-energy electron diffraction(RHEED), X-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.
Original language | English |
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Pages (from-to) | 113-116 |
Number of pages | 4 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 3287 |
DOIs | |
Publication status | Published - 1 Dec 1998 |
Externally published | Yes |
Event | Photodetectors: Materials and Devices III - San Jose, CA, United States Duration: 28 Jan 1998 → 30 Jan 1998 |
Keywords
- Bi/Bi Sb structure 1-x x
- Multilayer structure
- Quantum well
- Superlattice
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering