Investigation of Bi/Bi1-xSbxmultiquantum well structure

Xin Jian Yi, Xin Yu Zhang, Yi Li, Jianhua Hao, Xin Rong Zhao

Research output: Journal article publicationConference articleAcademic researchpeer-review


Bi/Bi1-xSbxmultiquantum well structure has been grown by molecular beam epitaxy (MBE) on GaAs(001) substrate with a buffer layer of CdTe (111). The GaAs substrate was preheated at a temperature of 580 °C in the MBE chamber with vacuum of 10-10torr for 10 minutes. The CdTe (111) buffer layer was grown with thickness of 300 nm at temperature of 280 °C. The Bi/Bi1-xSbxmultilayer structure with x of 0.15, repeated 40 times, was grown at substrate temperature of 130°C. As-deposited samples were characterized by reflection high-energy electron diffraction(RHEED), X-ray diffraction analysis and high-resolution transmission electron microscopy (TEM), indicating a good epitaxial layer quality. The energy band model of the samples have been suggested for the first time.
Original languageEnglish
Pages (from-to)113-116
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1 Dec 1998
Externally publishedYes
EventPhotodetectors: Materials and Devices III - San Jose, CA, United States
Duration: 28 Jan 199830 Jan 1998


  • Bi/Bi Sb structure 1-x x
  • Multilayer structure
  • Quantum well
  • Superlattice

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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