Abstract
In this paper, the role of microcracks in tin oxide gas sensing thin-films caused by high temperature annealing is discussed. In our research, cracks in rf sputtered tin oxide thin-films annealed at different conditions were investigated with scanning electron microscopy (SEM). Two techniques were used to reduce the cracking. The first was the use of tin oxide thin-films with copper-doping. The second method involved smoothing the underlying surface through the use of phosphorus-doped silicon glass (PSG). The role of the cracks for enhancing diffusion of moisture and oxygen is discussed using a revised short-circuiting pathway model.
Original language | English |
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Pages (from-to) | 39-47 |
Number of pages | 9 |
Journal | Sensors and Actuators, B: Chemical |
Volume | 79 |
Issue number | 1 |
DOIs | |
Publication status | Published - 25 Sept 2001 |
Externally published | Yes |
Keywords
- Microcracks
- Thin-film
- Tin oxide
ASJC Scopus subject areas
- Analytical Chemistry
- Electrochemistry
- Electrical and Electronic Engineering