Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging

Zhi Luo; H. K. Lau; P. K.L. Chan; Chi Wah Leung

doi:10.1109/TMAG.2013.2293780

Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging

Zhi Luo, H. K. Lau, P. K.L. Chan, Chi Wah Leung

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3(PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.

Original language	English
Article number	6851269
Journal	IEEE Transactions on Magnetics
Volume	50
Issue number	7
DOIs	https://doi.org/10.1109/TMAG.2013.2293780
Publication status	Published - 1 Jul 2014

Keywords

Nonvolatile memories
Pr Ca MnO (PCMO) 0.7 0.3 3
resistive switching (RS)
thermal imaging

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TMAG.2013.2293780

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title = "Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging",

abstract = "Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3(PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.",

keywords = "Nonvolatile memories, Pr Ca MnO (PCMO) 0.7 0.3 3, resistive switching (RS), thermal imaging",

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AU - Lau, H. K.

AU - Chan, P. K.L.

AU - Leung, Chi Wah

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N2 - Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3(PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.

AB - Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3(PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.

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Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging

Abstract

Keywords

ASJC Scopus subject areas

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