Investigating the Uneven Current Injection in Perovskite-Based Thin Film Bipolar Resistance Switching Devices by Thermal Imaging

Zhi Luo, H. K. Lau, P. K.L. Chan, Chi Wah Leung

Research output: Journal article publicationJournal articleAcademic researchpeer-review


Bipolar resistive switching (RS) phenomenon in planar Al/Pr0.7Ca0.3MnO3(PCMO)/Ti devices was investigated by thermoreflectance method. Thermal images of devices undergoing switching were used to quantify the unevenness of injected current under different voltage bias. At low resistance state, the injected current at the current crowding area of the Al/PCMO interface was 1.6 times higher than other regions of the interface. The uneven distribution of injected current indicated the existence of localized resistance at the interface, which cannot be simply measured by electrical measurements. The thermoreflectance method demonstrates the potential applications for in situ current profiling of the RS devices.
Original languageEnglish
Article number6851269
JournalIEEE Transactions on Magnetics
Issue number7
Publication statusPublished - 1 Jul 2014


  • Nonvolatile memories
  • Pr Ca MnO (PCMO) 0.7 0.3 3
  • resistive switching (RS)
  • thermal imaging

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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