Inverse design of highly-efficient and broadband polarization beam splitter on SOI platform

Polarization beam splitters (PBSs) are essential components in integrated optics, particularly for applications demanding high polarization purity. However, most existing PBS designs rely on complex forward design methods, often constrained by large size and limited performance. In this study, we introduce an inverse design approach based on shape optimization to develop a high-performance PBS on the silicon-on-insulator (SOI) platform. By optimizing the boundary shape, the proposed PBS exhibits low insertion loss (<1.4 dB) and high extinction ratio (>9.2 dB) across a bandwidth range of 65 nm (1500 nm–1565 nm), as confirmed by experimental results. The footprint of the device measures 1.7 × 16 μm², and the entire structure can be fabricated through a single lithography step. This work holds great promise for the convenient and efficient design of on-chip PBSs.