Interfacial structure of epitaxial SrTiO3on Si: Experiments and simulations

X. F. Wang, Juan Wang, Quan Li, M. S. Moreno, X. Y. Zhou, Jiyan Dai, Y. Wang, D. Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

9 Citations (Scopus)

Abstract

The interfacial structure of epitaxial SrTiO3(STO) on Si has been investigated using combined experimental and theoretical approaches. Together with high resolution high angle annular dark field image, spatially resolved electron energy loss spectroscopy (EELS) acquired across the STO/Si interface reveals an interfacial region of 1-2 monolayer thickness, which is lacking in Sr, but contains Ti, Si and O. General agreement exists between the experimental EELS results and the simulated ones, which are obtained based on a classical molecular dynamics interface model, disclosing a gradual change in the local atomic coordination symmetry and possible defect incorporation at the interface.
Original languageEnglish
Article number085409
JournalJournal of Physics D: Applied Physics
Volume42
Issue number8
DOIs
Publication statusPublished - 3 Nov 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this