Interfacial reactions on annealing Cu/Al multilayer thin films

H. G. Jiang, Jiyan Dai, H. Y. Tong, B. Z. Ding, Q. H. Song, Z. Q. Hu

Research output: Journal article publicationJournal articleAcademic researchpeer-review

86 Citations (Scopus)


Thin film reactions of Cu/Al multilayer films were investigated by differential scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2and Cu9Al4are 0.78±0.11 and 0.83±0.2 eV, respectively.
Original languageEnglish
Pages (from-to)6165-6169
Number of pages5
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 1 Dec 1993
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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