Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

Hon K. Lau; P. K L Chan; Chi Wah Leung

doi:10.1109/INEC.2010.5424539

Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

Hon K. Lau, P. K L Chan, Chi Wah Leung

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

Resistive switching effect has been demonstrated in LaNiO 3\Pa0.7Ca0.3MnO3\Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.

Original language	English
Title of host publication	INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages	744-745
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2010.5424539
Publication status	Published - 5 May 2010
Event	2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 3 Jan 2010 → 8 Jan 2010

Conference

Conference	2010 3rd International Nanoelectronics Conference, INEC 2010
Country/Territory	China
City	Hongkong
Period	3/01/10 → 8/01/10

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/INEC.2010.5424539

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title = "Interfacial nature of resistive switching effect in perovskite-oxide thin film devices",

abstract = "Resistive switching effect has been demonstrated in LaNiO 3\Pa0.7Ca0.3MnO3\Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.",

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Interfacial nature of resistive switching effect in perovskite-oxide thin film devices. / Lau, Hon K.; Chan, P. K L; Leung, Chi Wah.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 744-745 5424539.

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

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AU - Chan, P. K L

AU - Leung, Chi Wah

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N2 - Resistive switching effect has been demonstrated in LaNiO 3\Pa0.7Ca0.3MnO3\Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.

AB - Resistive switching effect has been demonstrated in LaNiO 3\Pa0.7Ca0.3MnO3\Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.

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M3 - Conference article published in proceeding or book

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BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

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Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

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