Interfacial nature of resistive switching effect in perovskite-oxide thin film devices

Hon K. Lau, P. K L Chan, Chi Wah Leung

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Resistive switching effect has been demonstrated in LaNiO 3\Pa0.7Ca0.3MnO3\Ti top-down device structures. Hysteretic Current-voltage (I-V) characteristic was observed by applying potential differences in the order of 5 V across the electrodes. I-V characteristics with different combinations of top and bottom electrodes were measured, in order to identify the location contributing to the switching. Our results suggested that the interface between PCMO and the electrodes are responsible for the resistive switching effect.
Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages744-745
Number of pages2
DOIs
Publication statusPublished - 5 May 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
Country/TerritoryChina
CityHongkong
Period3/01/108/01/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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