Interfacial microstructure and electrical properties of HfAlOxthin films on compressively strained Si83Ge17grown by RF magnetron sputtering

X. Y. Qiu; K. C. Chan; P. F. Lee; X. W. Dong; Jiyan Dai

doi:10.1016/j.mee.2009.03.130

Interfacial microstructure and electrical properties of HfAlO_xthin films on compressively strained Si₈₃Ge₁₇grown by RF magnetron sputtering

X. Y. Qiu
, K. C. Chan
, P. F. Lee
, X. W. Dong
, Jiyan Dai

Research output: Journal article publication › Journal article › Academic research › peer-review

1 Citation (Scopus)

Abstract

Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.

Original language	English
Pages (from-to)	2247-2250
Number of pages	4
Journal	Microelectronic Engineering
Volume	86
Issue number	11
DOIs	https://doi.org/10.1016/j.mee.2009.03.130
Publication status	Published - 1 Nov 2009

Keywords

HfAlO films x
Hysteresis
Interfacial microstructure
RF magnetron sputtering

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

More information

10.1016/j.mee.2009.03.130

Cite this

@article{2192072ff4914c90bb6394cf85b3ae75,

title = "Interfacial microstructure and electrical properties of HfAlOxthin films on compressively strained Si83Ge17grown by RF magnetron sputtering",

abstract = "Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.",

keywords = "HfAlO films x, Hysteresis, Interfacial microstructure, RF magnetron sputtering",

author = "Qiu, \{X. Y.\} and Chan, \{K. C.\} and Lee, \{P. F.\} and Dong, \{X. W.\} and Jiyan Dai",

year = "2009",

month = nov,

day = "1",

doi = "10.1016/j.mee.2009.03.130",

language = "English",

volume = "86",

pages = "2247--2250",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

number = "11",

}

TY - JOUR

T1 - Interfacial microstructure and electrical properties of HfAlOxthin films on compressively strained Si83Ge17grown by RF magnetron sputtering

AU - Qiu, X. Y.

AU - Chan, K. C.

AU - Lee, P. F.

AU - Dong, X. W.

AU - Dai, Jiyan

PY - 2009/11/1

Y1 - 2009/11/1

N2 - Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.

AB - Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.

KW - HfAlO films x

KW - Hysteresis

KW - Interfacial microstructure

KW - RF magnetron sputtering

UR - https://www.scopus.com/pages/publications/69549103091

U2 - 10.1016/j.mee.2009.03.130

DO - 10.1016/j.mee.2009.03.130

M3 - Journal article

SN - 0167-9317

VL - 86

SP - 2247

EP - 2250

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 11

ER -