Interfacial microstructure and electrical properties of HfAlOxthin films on compressively strained Si83Ge17grown by RF magnetron sputtering

X. Y. Qiu, K. C. Chan, P. F. Lee, X. W. Dong, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

1 Citation (Scopus)

Abstract

Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.
Original languageEnglish
Pages (from-to)2247-2250
Number of pages4
JournalMicroelectronic Engineering
Volume86
Issue number11
DOIs
Publication statusPublished - 1 Nov 2009

Keywords

  • HfAlO films x
  • Hysteresis
  • Interfacial microstructure
  • RF magnetron sputtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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