Abstract
Interfacial microstructure and electrical properties of HfAlOxfilms deposited by RF magnetron sputtering on compressively strained Si83Ge17/Si substrates were investigated. HfSiOx-dominated amorphous interfacial layer (IL) embedded with crystalline HfSixnano-particles were revealed by high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy depth profile study. About 280 mV-wide clockwise capacitance-voltage(C-V) hysteresis for the HfAlOxfilm deposited in Ar + N2mixed ambient was observed. Oxygen vacancies and interfacial defects in the HfSiOxIL, as well as trapped charges in the boundaries between the HfSixnano-particles and surrounded amorphous HfSiOxmay be responsible for the large C-V hysteresis.
Original language | English |
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Pages (from-to) | 2247-2250 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 86 |
Issue number | 11 |
DOIs | |
Publication status | Published - 1 Nov 2009 |
Keywords
- HfAlO films x
- Hysteresis
- Interfacial microstructure
- RF magnetron sputtering
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering