Interfacial Engineering of Cu2O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al2O3Passivation Layer

Le Li, Guanlin Du, Xi Zhou, Yinyue Lin, Yuanwei Jiang, Xingyu Gao, Linfeng Lu, Gang Li, Wei Zhang, Qiang Feng, Jilei Wang, Liyou Yang, Dongdong Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review


Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (c-Si) photovoltaic industry. In this work, efficient p-type c-Si (p-Si) solar cells with cuprous oxide (Cu2O) hole-selective contacts are demonstrated. The direct p-Si/Cu2O contact leads to a substoichiometric SiOx interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al2O3 layer is subsequently employed at the p-Si/Cu2O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu2O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a p-Si/Al2O3/Cu2O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.

Original languageEnglish
Pages (from-to)28415–28423
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number24
Publication statusPublished - 23 Jun 2021


  • crystalline silicon solar cells
  • cuprous oxide
  • energy band alignment
  • hole-selective contacts
  • tunneling passivation

ASJC Scopus subject areas

  • Materials Science(all)

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