Interfacial engineering for high performance perovskite solar cells

Damir Aidarkhanov, Zhiwei Ren, Zhuldyz Yelzhanova, Bakhytzhan Baptayev, Mannix Balanay, Charles Surya, Annie Ng

    Research output: Journal article publicationConference articleAcademic researchpeer-review

    Abstract

    Outstanding material properties allowed perovskite solar cells’ power conversion efficiencies (PCEs) exceed 25% within a decade, demonstrating the most rapid increase rate in PCEs among all the existing photovoltaic (PV) technologies. Despite such significant progress perovskite technology commercialization requires further enhancement in device performance. Here, we report a strategy for optimizing interfacial quality of the perovskite solar cells (PSCs). The interfacial layer between the electron transport layer (ETL) and the perovskite absorber were optimized by interface engineering technique via preparing the ETL consisted of Tin(IV) oxide (SnO2) quantum dots (QDs), SnO2 nanoparticle (NP) and a passivation layer based on Poly(methyl methacrylate): [6,6]-phenyl-C61-butyric acid methyl ester (PMMA:PCBM). It was demonstrated that the PSCs with a single-layer ETL made of SnO2 QDs exhibit strong I-V hysteresis, while the application of a triple-layer ETL effectively suppresses the hysteresis due to the optimization of ETL/ perovskite interface. This work demonstrated the effective protocol which can substantially improve the performance of PSCs and eliminate the I-V hysteresis.

    Original languageEnglish
    Pages (from-to)2482-2486
    Number of pages5
    JournalMaterials Today: Proceedings
    Volume49
    DOIs
    Publication statusPublished - Jan 2021
    Event8th International Conference on Nanomaterials and Advanced Energy Storage Systems, INESS 2020 - Uttar Pradesh, India
    Duration: 6 Aug 20206 Aug 2020

    Keywords

    • Defects
    • Hysteresis
    • Interface
    • Passivation
    • Perovskites
    • Solar cells

    ASJC Scopus subject areas

    • General Materials Science

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