Interfacial defects in resistive switching devices probed by thermal analysis

H. K. Lau, Chi Wah Leung, W. H. Hu, P. K.L. Chan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

6 Citations (Scopus)


Resistive switching mechanism is investigated by thermal analysis of metal electrodes in the planar Al/ Pr0.7Ca0.3MnO3(PCMO) /Ni resistive switching device geometry. Two microthermocouples are used to monitor the electrode temperatures under different electrical bias conditions. Comparison of temperature differences between Al and Ni electrodes at high and low resistance states suggests that local heat source exists under the Al electrode at high resistance state. It agrees well with the recent finding in which AlOxpresents at the Al/PCMO interface and it can be the origin of the resistance switching mechanism [Li, J. Phys. D 42, 045411 (2009)]. Thermal measurements demonstrate excellent capability on characterizing resistance switching devices.
Original languageEnglish
Article number014504
JournalJournal of Applied Physics
Issue number1
Publication statusPublished - 24 Jul 2009

ASJC Scopus subject areas

  • General Physics and Astronomy


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