Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions

X. H. Wei; W. Huang; Z. B. Yang; Jianhua Hao

doi:10.1016/j.scriptamat.2011.04.035

Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions

X. H. Wei, W. Huang, Z. B. Yang, Jianhua Hao

Research output: Journal article publication › Journal article › Academic research › peer-review

15 Citations (Scopus)

Abstract

Oxygen-deficient SrTiO3-δthin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.

Original language	English
Pages (from-to)	323-326
Number of pages	4
Journal	Scripta Materialia
Volume	65
Issue number	4
DOIs	https://doi.org/10.1016/j.scriptamat.2011.04.035
Publication status	Published - 1 Aug 2011

Keywords

Heterojunctions
III-V semiconductor
Interface
Titanate oxides

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/j.scriptamat.2011.04.035

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abstract = "Oxygen-deficient SrTiO3-δthin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.",

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T1 - Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions

AU - Wei, X. H.

AU - Huang, W.

AU - Yang, Z. B.

AU - Hao, Jianhua

PY - 2011/8/1

Y1 - 2011/8/1

N2 - Oxygen-deficient SrTiO3-δthin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.

AB - Oxygen-deficient SrTiO3-δthin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.

KW - Heterojunctions

KW - III-V semiconductor

KW - Interface

KW - Titanate oxides

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DO - 10.1016/j.scriptamat.2011.04.035

M3 - Journal article

VL - 65

SP - 323

EP - 326

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 4

ER -

Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions

Abstract

Keywords

ASJC Scopus subject areas

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