Interfacial and rectifying characteristic of epitaxial SrTiO 3-δ/GaAs p-n junctions

X. H. Wei, W. Huang, Z. B. Yang, Jianhua Hao

Research output: Journal article publicationJournal articleAcademic researchpeer-review

14 Citations (Scopus)

Abstract

Oxygen-deficient SrTiO3-δthin films were grown on p-GaAs substrates to form p-n heterojunctions. The interfacial and transport characteristics of the heterojunctions have been investigated. The sharp interface was found to be epitaxially crystallized. The junctions present good rectifying behaviors and thickness dependence of current-voltage properties. The electronic transport of 200 nm thick SrTiO3-δ/GaAs could be explained by a space charge limited model. When the thickness was reduced further, the diode ideality factors were almost temperature independent, which might be attributed to a strain-assisted tunneling mechanism.
Original languageEnglish
Pages (from-to)323-326
Number of pages4
JournalScripta Materialia
Volume65
Issue number4
DOIs
Publication statusPublished - 1 Aug 2011

Keywords

  • Heterojunctions
  • III-V semiconductor
  • Interface
  • Titanate oxides

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this