Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation

Keyphrases

• Interfacial Properties 100%
• Electrical Properties 100%
• Passivation Layer 100%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 100%
• Fluorine Incorporation 100%
• Fluorine Plasma Treatment 66%
• Annealing 33%
• Gate Dielectric 33%
• Excellent Performance 33%
• Frequency Dispersion 33%
• Gate Leakage Current 33%
• Capacitance-voltage 33%
• Flat-band Voltage 33%
• Interface State Density 33%
• Suppressed Growth 33%
• Stacked Gate Dielectric 33%
• Ge Surface 33%
• Ge Oxides 33%
• Small Frequency 33%

Material Science

• Capacitor 100%
• Metal Oxide 100%
• Interface Property 100%
• Oxide Semiconductor 100%
• Dielectric Material 100%
• Annealing 50%
• Capacitance 50%
• Surface (Surface Science) 50%
• Density 50%
• Oxide Compound 50%

Engineering

• Passivation Layer 100%
• Gate Dielectric 100%
• Plasma Treatment 100%
• Metal Oxide Semiconductor 100%
• Experimental Result 50%
• Frequency Dispersion 50%
• Ge Interface 50%
• Ge Surface 50%
• Interlayer 50%
• Interface State 50%