Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation

Yong Huang, Jing Ping Xu, Lu Liu, Zhi Xiang Cheng, Pui To Lai, Wing Man Tang

Research output: Journal article publicationConference articleAcademic researchpeer-review

2 Citations (Scopus)


Ge Metal-Oxide-Semiconductor (MOS) capacitor with HfTiON/ZrLaON stacked gate dielectric and fluorine-plasma treatment is fabricated, and its interfacial and electrical properties are compared with its counterparts without the ZrLaON passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (3.7×1011 cm-2eV-1), small flatband voltage (0.21 V), good capacitance-voltage behavior, small frequency dispersion and low gate leakage current (4.41×10-5 A/cm2 at Vg = Vfb + 1V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate-dielectric annealing by the ZrLaON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the ZrLaON/Ge interface and improving the electrical properties of the device.

Original languageEnglish
Article number012018
JournalIOP Conference Series: Materials Science and Engineering
Issue number1
Publication statusPublished - 22 Sept 2017
Event2017 2nd International Conference on Advanced Materials Research and Manufacturing Technologies, AMRMT 2017 - Phuket, Thailand
Duration: 2 Aug 20175 Aug 2017

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering


Dive into the research topics of 'Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation'. Together they form a unique fingerprint.

Cite this