Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan; C. Surya; Ping Kong Alexander Wai

Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan, C. Surya, Ping Kong Alexander Wai

The Hong Kong Polytechnic University

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

Abstract

The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

Original language	English
Title of host publication	Proceedings of the IEEE Hong Kong Electron Devices Meeting
Pages	17-20
Number of pages	4
Publication status	Published - 1 Jan 2001
Event	2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 30 Jun 2001 → …

Conference

Conference	2001 IEEE Hong Kong Electron Devices Meeting
Country/Territory	Hong Kong
City	Hong Kong
Period	30/06/01 → …

Keywords

GaInNAs/GaAs
Interdiffusion
Laser
Optical gain
Quantum well
Semiconductor

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Interdiffusion of GaInNAs/GaAs quantum wells",

abstract = "The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.",

keywords = "GaInNAs/GaAs, Interdiffusion, Laser, Optical gain, Quantum well, Semiconductor",

author = "Chan, {M. C Y} and C. Surya and Wai, {Ping Kong Alexander}",

year = "2001",

month = jan,

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booktitle = "Proceedings of the IEEE Hong Kong Electron Devices Meeting",

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AU - Surya, C.

AU - Wai, Ping Kong Alexander

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N2 - The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

AB - The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.

KW - GaInNAs/GaAs

KW - Interdiffusion

KW - Laser

KW - Optical gain

KW - Quantum well

KW - Semiconductor

UR - http://www.scopus.com/inward/record.url?scp=0034829379&partnerID=8YFLogxK

M3 - Conference article published in proceeding or book

SP - 17

EP - 20

BT - Proceedings of the IEEE Hong Kong Electron Devices Meeting

T2 - 2001 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 June 2001

ER -

Interdiffusion of GaInNAs/GaAs quantum wells

Abstract

Conference

Keywords

ASJC Scopus subject areas

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