Interdiffusion of GaInNAs/GaAs quantum wells

M. C Y Chan, C. Surya, Ping Kong Alexander Wai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

The optical gain spectra for interdiffused GaxIn1-xN0.04 As0.96/ GaAs single quantum wells are studied theoretically using the Fick's Law and Fermi Golden Rule. Due to quantum well interdiffusion, the peak gain and the shift of the gain peaks vary with the diffusion lengths. Our results show that interdiffusion technique can be used to tune the operating wavelength for multi-wavelength applications without degradation of device performance.
Original languageEnglish
Title of host publicationProceedings of the IEEE Hong Kong Electron Devices Meeting
Pages17-20
Number of pages4
Publication statusPublished - 1 Jan 2001
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: 30 Jun 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
CountryHong Kong
CityHong Kong
Period30/06/01 → …

Keywords

  • GaInNAs/GaAs
  • Interdiffusion
  • Laser
  • Optical gain
  • Quantum well
  • Semiconductor

ASJC Scopus subject areas

  • Engineering(all)

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