Injection-limited contact in bottom-contact pentacene organic thin-film transistors

Y. Hong; Feng Yan; P. Migliorato; S. H. Han; J. Jang

doi:10.1016/j.tsf.2006.10.074

Injection-limited contact in bottom-contact pentacene organic thin-film transistors

Y. Hong, Feng Yan, P. Migliorato, S. H. Han, J. Jang

Research output: Journal article publication › Journal article › Academic research › peer-review

28 Citations (Scopus)

Abstract

The contact effect in bottom-contact pentacene-based thin-film transistor, with Au source/drain electrode, is investigated. By separating the voltage drop at the source contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.

Original language	English
Pages (from-to)	4032-4035
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	7-8
DOIs	https://doi.org/10.1016/j.tsf.2006.10.074
Publication status	Published - 26 Feb 2007
Externally published	Yes

Keywords

Bottom contact
Injection
Organic thin-film transistor
Pentacene

ASJC Scopus subject areas

Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces

More information

10.1016/j.tsf.2006.10.074

Cite this

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abstract = "The contact effect in bottom-contact pentacene-based thin-film transistor, with Au source/drain electrode, is investigated. By separating the voltage drop at the source contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.",

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AU - Hong, Y.

AU - Yan, Feng

AU - Migliorato, P.

AU - Han, S. H.

AU - Jang, J.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - The contact effect in bottom-contact pentacene-based thin-film transistor, with Au source/drain electrode, is investigated. By separating the voltage drop at the source contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.

AB - The contact effect in bottom-contact pentacene-based thin-film transistor, with Au source/drain electrode, is investigated. By separating the voltage drop at the source contact from the source-drain voltage, the current-voltage characteristic of the injection contact is obtained. The contact characteristics are in good agreement with a model of carrier injection from a metal electrode into a disordered hopping system.

KW - Bottom contact

KW - Injection

KW - Organic thin-film transistor

KW - Pentacene

UR - https://www.scopus.com/pages/publications/33846902116

U2 - 10.1016/j.tsf.2006.10.074

DO - 10.1016/j.tsf.2006.10.074

M3 - Journal article

SN - 0040-6090

VL - 515

SP - 4032

EP - 4035

JO - Thin Solid Films

JF - Thin Solid Films

IS - 7-8

ER -

Injection-limited contact in bottom-contact pentacene organic thin-film transistors

Abstract

Keywords

ASJC Scopus subject areas

More information

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