InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers

Jin Hui Tong; Bi Jun Zhao; Zhi Wei Ren; Xing Fu Wang; Xin Chen; Shu Ti Li

doi:10.1088/0256-307X/30/5/058503

InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers

Jin Hui Tong, Bi Jun Zhao, Zhi Wei Ren, Xing Fu Wang, Xin Chen, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

5 Citations (Scopus)

Abstract

A three-layer p-type Al0.82In0.18N-GaN-Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N-GaN-Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.

Original language	English
Article number	058503
Journal	Chinese Physics Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/30/5/058503
Publication status	Published - May 2013

ASJC Scopus subject areas

General Physics and Astronomy

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10.1088/0256-307X/30/5/058503

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title = "InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers",

abstract = "A three-layer p-type Al0.82In0.18N-GaN-Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N-GaN-Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.",

author = "Tong, {Jin Hui} and Zhao, {Bi Jun} and Ren, {Zhi Wei} and Wang, {Xing Fu} and Xin Chen and Li, {Shu Ti}",

year = "2013",

month = may,

doi = "10.1088/0256-307X/30/5/058503",

language = "English",

volume = "30",

journal = "Chinese Physics Letters",

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TY - JOUR

T1 - InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers

AU - Tong, Jin Hui

AU - Zhao, Bi Jun

AU - Ren, Zhi Wei

AU - Wang, Xing Fu

AU - Chen, Xin

AU - Li, Shu Ti

PY - 2013/5

Y1 - 2013/5

N2 - A three-layer p-type Al0.82In0.18N-GaN-Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N-GaN-Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.

AB - A three-layer p-type Al0.82In0.18N-GaN-Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N-GaN-Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.

UR - http://www.scopus.com/inward/record.url?scp=84877844041&partnerID=8YFLogxK

U2 - 10.1088/0256-307X/30/5/058503

DO - 10.1088/0256-307X/30/5/058503

M3 - Journal article

AN - SCOPUS:84877844041

SN - 0256-307X

VL - 30

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 5

M1 - 058503

ER -

InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers

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