InGaN-based blue light emitting diodes with AlInN-GaN-AlInN electron blocking layers

Jin Hui Tong, Bi Jun Zhao, Zhi Wei Ren, Xing Fu Wang, Xin Chen, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

5 Citations (Scopus)


A three-layer p-type Al0.82In0.18N-GaN-Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N-GaN-Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.

Original languageEnglish
Article number058503
JournalChinese Physics Letters
Issue number5
Publication statusPublished - May 2013
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy


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