Abstract
S. Maney & Son Ltd. Al doped ZnO (AZO) films were prepared on glass substrates by radio frequency (RF) magnetron sputtering technology. Surface morphology, crystal structure, chemical composition, UV-visible transmittance, electrical and infrared properties of the AZO films were investigated by atomic force microscopy, scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, Spectrophotometer, Hall measurement system and Fourier Transform infrared spectroscopy, respectively. The results indicate that AZO films with strong c-axis preferred wurtzite structure were successfully prepared by RF magnetron sputtering at room temperature. The average visible transmittance and infrared reflection rate (from 1·5 to 25 mm) of the deposited films was 84·8 and 30%, respectively. The study creates a sound basis for investigating the infrared properties of AZO films for future heat shielding films.
| Original language | English |
|---|---|
| Pages (from-to) | 321-325 |
| Number of pages | 5 |
| Journal | Materials Technology |
| Volume | 29 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Jan 2014 |
Keywords
- Al doped ZnO
- Infrared reflection
- RF magnetron sputtering
- Thin films
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering