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Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction
Yiqun Zhao
, Libin Tang
, Shengyi Yang
,
Shu Ping Lau
, Kar Seng Teng
Department of Applied Physics
The Hong Kong Polytechnic University
Research output
:
Journal article publication
›
Journal article
›
Academic research
›
peer-review
16
Citations (Scopus)
Overview
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Dive into the research topics of 'Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction'. Together they form a unique fingerprint.
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Keyphrases
N-Si
100%
Infrared Photovoltaics
100%
GeTe
100%
Photovoltaic Detector
100%
Si Heterojunction
100%
Room Temperature
50%
Applications in the Field
50%
Physical Properties
25%
High Performance
25%
Optical Properties
25%
Semiconductor Materials
25%
Electrical Properties
25%
Light Irradiation
25%
Spintronic Devices
25%
Nanofilm
25%
Storage Devices
25%
Magnetron Sputtering Deposition
25%
Phase Change Energy Storage
25%
Narrow-gap Semiconductor
25%
Material Science
Heterojunction
100%
Photovoltaics
100%
Semiconductor Material
33%
Magnetron Sputtering
33%
Physical Property
33%
Optical Property
33%