Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Yiqun Zhao, Libin Tang, Shengyi Yang, Shu Ping Lau, Kar Seng Teng

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, GeTe nanofilms were grown by magnetron sputtering technique and characterized to investigate its physical, electrical, and optical properties. A high-performance infrared photovoltaic detector based on GeTe/Si heterojunction with the detectivity of 8 × 1011 Jones at 850 nm light irradiation at room temperature was demonstrated.

Original languageEnglish
Article number138
JournalNanoscale Research Letters
Volume15
Issue number1
DOIs
Publication statusPublished - 29 Jun 2020

Keywords

  • GeTe
  • Heterojunction
  • Optoelectronic characteristics
  • Photovoltaic detector

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this