Abstract
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 107A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
| Original language | English |
|---|---|
| Pages (from-to) | 5878-5883 |
| Number of pages | 6 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 43 |
| DOIs | |
| Publication status | Published - 14 Nov 2012 |
Keywords
- graphene
- infrared sensors
- lead sulfide
- phototransistors
- quantum dots
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
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