Infrared photodetectors based on CVD-grown graphene and PbS quantum dots with ultrahigh responsivity

Zhenhua Sun, Zhike Liu, Jinhua Li, Guo An Tai, Shu Ping Lau, Feng Yan

Research output: Journal article publicationJournal articleAcademic researchpeer-review

553 Citations (Scopus)


Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 107A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
Original languageEnglish
Pages (from-to)5878-5883
Number of pages6
JournalAdvanced Materials
Issue number43
Publication statusPublished - 14 Nov 2012


  • graphene
  • infrared sensors
  • lead sulfide
  • phototransistors
  • quantum dots

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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