Abstract
Infrared photodetectors based on single-layer CVD-grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 107A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field-effect doping in graphene films induced by negative charges generated in the quantum dots.
Original language | English |
---|---|
Pages (from-to) | 5878-5883 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 43 |
DOIs | |
Publication status | Published - 14 Nov 2012 |
Keywords
- graphene
- infrared sensors
- lead sulfide
- phototransistors
- quantum dots
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering