Infrared light gated MoS2field effect transistor

Huajing Fang, Ziyuan Lin, Xinsheng Wang, Chun Yin Tang, Yan Chen, Fan Zhang, Yang Chai, Qiang Li, Qingfeng Yan, H. L.W. Chan, Jiyan Dai

Research output: Journal article publicationJournal articleAcademic researchpeer-review

15 Citations (Scopus)


Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS2transistor through a device composed of MoS2monolayer and a ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT). With a monolayer MoS2onto the top surface of (111) PMN-PT crystal, the drain current of MoS2channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm-2. The IR response of MoS2transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS22D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS2in the visible range, the MoS2on ferroelectric single crystal may be sensitive to a broadband wavelength of light.
Original languageEnglish
Pages (from-to)31908-31914
Number of pages7
JournalOptics Express
Issue number25
Publication statusPublished - 14 Dec 2015

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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