Infrared light gated MoS₂field effect transistor

Molybdenum disulfide (MoS2) as a promising 2D material has attracted extensive attentions due to its unique physical, optical and electrical properties. In this work, we demonstrate an infrared (IR) light gated MoS2transistor through a device composed of MoS2monolayer and a ferroelectric single crystal Pb(Mg1/3Nb2/3)O3-PbTiO3(PMN-PT). With a monolayer MoS2onto the top surface of (111) PMN-PT crystal, the drain current of MoS2channel can be modulated with infrared illumination and this modulation process is reversible. Thus, the transistor can work as a new kind of IR photodetector with a high IR responsivity of 114%/Wcm-2. The IR response of MoS2transistor is attributed to the polarization change of PMN-PT single crystal induced by the pyroelectric effect which results in a field effect. Our result promises the application of MoS22D material in infrared optoelectronic devices. Combining with the intrinsic photocurrent feature of MoS2in the visible range, the MoS2on ferroelectric single crystal may be sensitive to a broadband wavelength of light.