Influences of Remote Coulomb and Interface-Roughness Scatterings on Electron Mobility of InGaAs nMOSFET with High-k Stacked Gate Dielectric

Li Sheng Wang, Jing Ping Xu, Lu Liu, Yuan Huang, Han Han Lu, Pui To Lai, Wing Man Tang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

10 Citations (Scopus)


A physics-based electron-mobility model including remote Coulomb scattering by fixed charge in high-k dielectric and remote interface-roughness scattering originated from the fluctuation of high-k/interlayer interface is established for InGaAs MOSFET, and the validity of the model is confirmed by good agreement between simulated results and experimental data. Effects of structural and physical parameters of the devices on the electron mobility are analyzed using the model, and the results show that smoother high-k/interlayer interface, reasonably high permittivities for the interlayer and high-k dielectric, and less fixed charge in the high-k dielectric are desired to enhance the electron mobility and simultaneously keep further scaling of equivalent oxide thickness.
Original languageEnglish
Article number7140817
Pages (from-to)854-861
Number of pages8
JournalIEEE Transactions on Nanotechnology
Issue number5
Publication statusPublished - 1 Sep 2015


  • effective electron mobility
  • high-k dielectric
  • InGaAs MOSFETs
  • remote Coulomb scattering
  • remote interfaceroughness scattering

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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