Influence of trap states on dynamic properties of single grain silicon thin film transistors

Feng Yan; P. Migliorato; R. Ishihara

doi:10.1063/1.2193049

Influence of trap states on dynamic properties of single grain silicon thin film transistors

Feng Yan
, P. Migliorato
, R. Ishihara

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.

Original language	English
Article number	153507
Journal	Applied Physics Letters
Volume	88
Issue number	15
DOIs	https://doi.org/10.1063/1.2193049
Publication status	Published - 10 Apr 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2193049

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abstract = "The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.",

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AB - The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.

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Influence of trap states on dynamic properties of single grain silicon thin film transistors

Abstract

ASJC Scopus subject areas

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