Abstract
The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.
Original language | English |
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Article number | 153507 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 15 |
DOIs | |
Publication status | Published - 10 Apr 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)