Influence of trap states on dynamic properties of single grain silicon thin film transistors

Feng Yan, P. Migliorato, R. Ishihara

Research output: Journal article publicationJournal articleAcademic researchpeer-review

20 Citations (Scopus)


The transient properties of single grain-thin film transistors (SG-TFTs) with high electron mobility have been studied. Overshoot current induced by trap states has been observed in most of the devices. A method of ac measurements has been used to investigate the trap processes. Both transient and ac measurements show that the response of some SG-TFTs with high field effect mobility is dominated by a single trap level. Bias stressing on SG-TFT can induce more trap states and thus change the ac response of the device.
Original languageEnglish
Article number153507
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 10 Apr 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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