Experimental surface acoustic wave velocity dispersion data are reported which were obtained from thin-film tungsten silicide layers (500-2500 angstrom) cosputtered on single-crystal silicon wavers, as a function of various thermal processing treatments. The velocity dispersion data were determined, using an acoustic microscope operating at 375 MHz, by the acoustic material signature (AMS) technique. Transmission electron microscopy and X-ray diffraction analysis were used to characterize the microstructure of these thin films. Simple mathematical expressions for the transmission of a surface wave along a varying polycrystalline structure were used to interrupt the experimental data; the approximate model thus developed makes it possible to access the interface conditions between grains in the material.
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