Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

X. G. Li; Z. J. Liu; X. Y. Xie; A. G. Kang; Weinong Fu

doi:10.1155/2016/4259846

Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

X. G. Li, Z. J. Liu, X. Y. Xie, A. G. Kang, Weinong Fu

The Hong Kong Polytechnic University

Research output: Journal article publication › Journal article › Academic research › peer-review

Abstract

G. Li et al. As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

Original language	English
Article number	4259846
Journal	Advances in Materials Science and Engineering
Volume	2016
DOIs	https://doi.org/10.1155/2016/4259846
Publication status	Published - 1 Jan 2016

ASJC Scopus subject areas

General Materials Science
General Engineering

More information

10.1155/2016/4259846

http://hdl.handle.net/10397/65902

Cite this

@article{ac2d4b775d9d4fb7883ead1fc5cc9b74,

title = "Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect",

abstract = "G. Li et al. As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.",

author = "Li, {X. G.} and Liu, {Z. J.} and Xie, {X. Y.} and Kang, {A. G.} and Weinong Fu",

year = "2016",

month = jan,

day = "1",

doi = "10.1155/2016/4259846",

language = "English",

volume = "2016",

journal = "Advances in Materials Science and Engineering",

issn = "1687-8434",

publisher = "John Wiley and Sons Ltd",

}

TY - JOUR

T1 - Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

AU - Li, X. G.

AU - Liu, Z. J.

AU - Xie, X. Y.

AU - Kang, A. G.

AU - Fu, Weinong

PY - 2016/1/1

Y1 - 2016/1/1

N2 - G. Li et al. As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

AB - G. Li et al. As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.

UR - http://www.scopus.com/inward/record.url?scp=85008668676&partnerID=8YFLogxK

U2 - 10.1155/2016/4259846

DO - 10.1155/2016/4259846

M3 - Journal article

SN - 1687-8434

VL - 2016

JO - Advances in Materials Science and Engineering

JF - Advances in Materials Science and Engineering

M1 - 4259846

ER -

Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this