Influence of nitrogen ion energy on the Raman spectroscopy of carbon nitride films

Y. H. Cheng, B. K. Tay, Shu Ping Lau, X. Shi, X. L. Qiao, Z. H. Sun, J. G. Chen, Y. P. Wu, C. S. Xie

Research output: Journal article publicationJournal articleAcademic researchpeer-review

23 Citations (Scopus)

Abstract

Carbon nitride films were deposited by filtered cathode vacuum arc combined with radio frequency nitrogen ion beam source. Both visible Raman spectroscopy and UV Raman spectroscopy are used to study the bonding type and the change of bonding structure in carbon nitride films with nitrogen ion energy. Both C-N bonds and C≡N bonds can be directly observed from the deconvolution results of visible and UV Raman spectra for carbon nitride films. Visible Raman spectroscopy is more sensitive to the disorder and clustering of sp2carbon. The UV (244 nm) Raman spectra clearly reveal the presence of the sp3C atoms in carbon nitride films. Nitrogen ion energy is an important factor that affects the structure of carbon nitride films. At low nitrogen ion energy (below 400 eV), the increase of nitrogen ion energy leads to the drastic increase of sp2/sp3ratio, sp2cluster size and C-N bonds fraction. At higher nitrogen ion energy, increase leads to the slight increase of C≡N bonds fraction and sp2cluster size, slight decrease of C-N bonds fraction and sp2/sp3ratio.
Original languageEnglish
Pages (from-to)2137-2144
Number of pages8
JournalDiamond and Related Materials
Volume10
Issue number12
DOIs
Publication statusPublished - 1 Dec 2001
Externally publishedYes

Keywords

  • Carbon nitride films
  • Filtered cathodic vacuum arc
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Materials Chemistry
  • Electrical and Electronic Engineering

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