Abstract
We demonstrate theoretically that the lateral field distribution can be utilized to enhance the relaxation oscillation frequency of semiconductor lasers. It is found, for some laser parameters, that gain-guided semiconductor lasers with narrow stripe can exhibit higher relaxation oscillation frequency than index-guided devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 32 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Jan 1996 |
| Externally published | Yes |
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering