Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors with HfLaO Gate Dielectric

Keyphrases

• Gate Dielectric 100%
• Doping Concentration 100%
• Gate Electrode 100%
• HfLaO 100%
• Amorphous InGaZnO (a-IGZO) 100%
• Carrier Mobility 33%
• Resistivity 33%
• Silicon Wafer 33%
• Thin-film Transistors 33%
• Field-effect Transistors 33%
• High-k Gate Dielectrics 33%
• Screening Effect 33%
• Polarizable 33%
• Hole Concentration 33%
• Metal Gate 33%
• Carbon Dots (C-dots) 33%
• Remote Phonon Scattering 33%
• Surface Phonons 33%
• Acceptor Concentration 33%
• Transistor Performance 33%
• P-type Silicon 33%

Material Science

• Thin-Film Transistor 100%
• Dielectric Material 100%
• Doping Concentration 100%
• Field Effect Transistors 25%
• Carrier Mobility 25%
• Electrical Resistivity 25%
• Silicon Wafer 25%
• Hole Concentration 25%
• Silicon 25%
• Indium Tin Oxide 25%