Abstract
Carbon nitride films were deposited by pulsed laser ablation of graphite target under nitrogen atmosphere at room temperature. A direct current discharge apparatus was used to supply active nitrogen species during the deposition of carbon nitride films. FTIR and X-ray photoelectron spectroscopy (XPS) were used to characterize the composition and bonding structure of the deposited films. The influence of deposition pressure in the range 1-20Pa on the composition and bonding structure of carbon nitride films was studied. The composition and structure are strongly depended on the deposition pressure. The N/C ratio in the deposited films increases linearly with increasing deposition pressure to 10Pa, further increase of the deposition pressure results in the slight increase of N/C ratio. FTIR spectra indicate the existence of C-N, C=N and C≡N bonds in the deposited films. Increasing deposition pressure results in the increase of C=C, C=N and C≡N bonds fraction and decrease of the C-N bonds fraction in the deposited films. XPS results are consistent with FTIR results, which indicate that increasing deposition pressure leads to the increase in the fraction of N atoms bonded to sp2C atoms and the fraction of sp2C atoms bonded to N atoms, and the decrease in the fraction of N atoms bonded to sp3C atoms and the fraction of sp3C atoms bonded to N atoms.
Original language | English |
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Pages (from-to) | 32-39 |
Number of pages | 8 |
Journal | Applied Surface Science |
Volume | 182 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 5 Nov 2001 |
Externally published | Yes |
Keywords
- Carbon nitride films
- Deposition pressure
- Laser ablation deposition
- Structure
ASJC Scopus subject areas
- Surfaces, Coatings and Films