Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu, T. P. Chen, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, Siu Fung Yu, Z. X. Li, C. Yuen, F. R. Zhu, M. C. Tan, S. Fung

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24 Citations (Scopus)

Abstract

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.
Original languageEnglish
Article number104306
JournalJournal of Applied Physics
Volume101
Issue number10
DOIs
Publication statusPublished - 11 Jun 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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