Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu; T. P. Chen; L. Ding; M. Yang; J. I. Wong; C. Y. Ng; Siu Fung Yu; Z. X. Li; C. Yuen; F. R. Zhu; M. C. Tan; S. Fung

doi:10.1063/1.2713946

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Y. Liu, T. P. Chen, L. Ding, M. Yang, J. I. Wong, C. Y. Ng, Siu Fung Yu, Z. X. Li, C. Yuen, F. R. Zhu, M. C. Tan, S. Fung

Research output: Journal article publication › Journal article › Academic research › peer-review

24 Citations (Scopus)

Abstract

We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

Original language	English
Article number	104306
Journal	Journal of Applied Physics
Volume	101
Issue number	10
DOIs	https://doi.org/10.1063/1.2713946
Publication status	Published - 11 Jun 2007
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

More information

10.1063/1.2713946

Cite this

@article{d8e27ffdab394142927c4b29bb7f8fec,

title = "Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure",

abstract = "We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.",

author = "Y. Liu and Chen, {T. P.} and L. Ding and M. Yang and Wong, {J. I.} and Ng, {C. Y.} and Yu, {Siu Fung} and Li, {Z. X.} and C. Yuen and Zhu, {F. R.} and Tan, {M. C.} and S. Fung",

year = "2007",

month = jun,

day = "11",

doi = "10.1063/1.2713946",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

AU - Liu, Y.

AU - Chen, T. P.

AU - Ding, L.

AU - Yang, M.

AU - Wong, J. I.

AU - Ng, C. Y.

AU - Yu, Siu Fung

AU - Li, Z. X.

AU - Yuen, C.

AU - Zhu, F. R.

AU - Tan, M. C.

AU - Fung, S.

PY - 2007/6/11

Y1 - 2007/6/11

N2 - We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

AB - We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices.

UR - http://www.scopus.com/inward/record.url?scp=34249908947&partnerID=8YFLogxK

U2 - 10.1063/1.2713946

DO - 10.1063/1.2713946

M3 - Journal article

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 104306

ER -

Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

Abstract

ASJC Scopus subject areas

More information

Other files and links

Fingerprint

Cite this