In                         2                         S                         3                          Quantum Dots: Preparation, Properties and Optoelectronic Application

Rujie Li; Libin Tang; Qing Zhao; Thuc Hue Ly; Kar Seng Teng; Yao Li; Yanbo Hu; Chang Shu; Shu Ping Lau

doi:10.1186/s11671-019-2992-0

In ₂ S ₃ Quantum Dots: Preparation, Properties and Optoelectronic Application

Rujie Li, Libin Tang, Qing Zhao, Thuc Hue Ly, Kar Seng Teng, Yao Li, Yanbo Hu, Chang Shu, Shu Ping Lau

Research output: Journal article publication › Journal article › Academic research › peer-review

22 Citations (Scopus)

Abstract

Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In ₂ S ₃ quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In ₂ S ₃ QDs with excellent crystal quality. The properties of the as-prepared In ₂ S ₃ QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 ¹³ Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.

Original language	English
Article number	161
Journal	Nanoscale Research Letters
Volume	14
DOIs	https://doi.org/10.1186/s11671-019-2992-0
Publication status	Published - 1 Jan 2019

Keywords

In S QDs
Optoelectronic application
Preparation
Properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

More information

10.1186/s11671-019-2992-0

http://hdl.handle.net/10397/81210

Cite this

@article{dccda860e2f84024babd08086423c4d4,

title = "In 2 S 3 Quantum Dots: Preparation, Properties and Optoelectronic Application",

abstract = " Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage. ",

keywords = "In S QDs, Optoelectronic application, Preparation, Properties",

author = "Rujie Li and Libin Tang and Qing Zhao and Ly, {Thuc Hue} and Teng, {Kar Seng} and Yao Li and Yanbo Hu and Chang Shu and Lau, {Shu Ping}",

year = "2019",

month = jan,

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doi = "10.1186/s11671-019-2992-0",

language = "English",

volume = "14",

journal = "Nanoscale Research Letters",

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In ₂ S ₃ Quantum Dots: Preparation, Properties and Optoelectronic Application. / Li, Rujie; Tang, Libin; Zhao, Qing et al.
In: Nanoscale Research Letters, Vol. 14, 161, 01.01.2019.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - In 2 S 3 Quantum Dots

T2 - Preparation, Properties and Optoelectronic Application

AU - Li, Rujie

AU - Tang, Libin

AU - Zhao, Qing

AU - Ly, Thuc Hue

AU - Teng, Kar Seng

AU - Li, Yao

AU - Hu, Yanbo

AU - Shu, Chang

AU - Lau, Shu Ping

PY - 2019/1/1

Y1 - 2019/1/1

N2 - Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.

AB - Low-dimensional semiconductors exhibit remarkable performances in many device applications because of their unique physical, electrical, and optical properties. In this paper, we report a novel and facile method to synthesize In 2 S 3 quantum dots (QDs) at atmospheric pressure and room temperature conditions. This involves the reaction of sodium sulfide with indium chloride and using sodium dodecyl sulfate (SDS) as a surfactant to produce In 2 S 3 QDs with excellent crystal quality. The properties of the as-prepared In 2 S 3 QDs were investigated and photodetectors based on the QDs were also fabricated to study the use of the material in optoelectronic applications. The results show that the detectivity of the device stabilizes at ~ 10 13 Jones at room temperature under 365 nm ultraviolet light irradiation at reverse bias voltage.

KW - In S QDs

KW - Optoelectronic application

KW - Preparation

KW - Properties

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DO - 10.1186/s11671-019-2992-0

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SN - 1931-7573

VL - 14

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

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