In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity

Ranran Zhuo, Longhui Zeng, Huiyu Yuan, Di Wu, Yuange Wang, Zhifeng Shi, Tingting Xu, Yongtao Tian, Xinjian Li, Yuen Hong Tsang

Research output: Journal article publicationJournal articleAcademic researchpeer-review

95 Citations (Scopus)


The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W–1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection. [Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)183-189
Number of pages7
JournalNano Research
Issue number1
Publication statusPublished - 1 Jan 2019


  • deep ultraviolet
  • heterojunction
  • photodetectors
  • PtSe
  • self-powered

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

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