Abstract
The research of ultraviolet photodetectors (UV PDs) have been attracting extensive attention, due to their important applications in many areas. In this study, PtSe2/GaN heterojunction is in-situ fabricated by synthesis of large-area vertically standing two-dimensional (2D) PtSe2 film on n-GaN substrate. The PtSe2/GaN heterojunction device demonstrates excellent photoresponse properties under illumination by deep UV light of 265 nm at zero bias voltage. Further analysis reveals that a high responsivity of 193 mA·W–1, an ultrahigh specific detectivity of 3.8 × 1014 Jones, linear dynamic range of 155 dB and current on/off ratio of ~ 108, as well as fast response speeds of 45/102 μs were obtained at zero bias voltage. Moreover, this device response quickly to the pulse laser of 266 nm with a rise time of 172 ns. Such high-performance PtSe2/GaN heterojunction UV PD demonstrated in this work is far superior to previously reported results, suggesting that it has great potential for deep UV detection. [Figure not available: see fulltext.].
Original language | English |
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Pages (from-to) | 183-189 |
Number of pages | 7 |
Journal | Nano Research |
Volume | 12 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1 Jan 2019 |
Keywords
- deep ultraviolet
- heterojunction
- photodetectors
- PtSe
- self-powered
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering