Abstract
We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.
| Original language | English |
|---|---|
| Pages (from-to) | 786-789 |
| Number of pages | 4 |
| Journal | Nanotechnology |
| Volume | 15 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2004 |
| Externally published | Yes |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering
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