In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

Chi Wah Leung; C. Bell; G. Burnell; M. G. Blamire

doi:10.1088/0957-4484/15/7/012

In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

Chi Wah Leung, C. Bell, G. Burnell, M. G. Blamire

Research output: Journal article publication › Journal article › Academic research › peer-review

11 Citations (Scopus)

Abstract

We report the fabrication of sub-micron cross-bridge Kelvin resistors from planar device heterostructures, utilizing a three-dimensional focused ion beam etching technique. By means of a conventional spin valve multilayer, we demonstrate that this geometry eliminates the parasitic resistances of the interconnects, permitting direct probing of device resistances in nanoscale dimensions. It is anticipated that such a technique can be applied to resistance measurements with current-perpendicular-to-plane device geometry in various material systems.

Original language	English
Pages (from-to)	786-789
Number of pages	4
Journal	Nanotechnology
Volume	15
Issue number	7
DOIs	https://doi.org/10.1088/0957-4484/15/7/012
Publication status	Published - 1 Jul 2004
Externally published	Yes

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/15/7/012

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DO - 10.1088/0957-4484/15/7/012

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In situ fabrication of a cross-bridge Kelvin resistor structure by focused ion beam microscopy

Abstract

ASJC Scopus subject areas

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