In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device

K. C. Kwon, Y. Zhang, L. Wang, W. Yu, X. Wang, I. H. Park, H. S. Choi, T. Ma, Z. Zhu, B. Tian, C. Su, K. P. Loh

Research output: Journal article publicationJournal articleAcademic researchpeer-review

Abstract

Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density device integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue synaptic device, whereas thicker films have a much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers. The SnS ferroelectric device exhibits synaptic behaviors with highly stable room-temperature operation, high linearity in potentiation/depression, long retention, and low cycle-to-cycle/device-to-device variations. The simulated device based on ferroelectric SnS achieves approximately 92.1% pattern recognition accuracy in an artificial neural network simulation. By switching the ferroelectric domains partially, multilevel conductance states and the conductance ratio can be obtained, achieving high pattern recognition accuracy.
Original languageEnglish
Pages (from-to)7628-7638
Number of pages11
JournalACS Nano
Volume14
Issue number6
DOIs
Publication statusPublished - Jun 2020

Keywords

  • *artificial synapse *ferroelectrics *neuromorphic computing *tin monosulfide *two-dimensional materials

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