TY - JOUR
T1 - In-Plane Anisotropic Properties of 1T′-MoS2 Layers
AU - Nam, Gwang Hyeon
AU - He, Qiyuan
AU - Wang, Xingzhi
AU - Yu, Yifu
AU - Chen, Junze
AU - Zhang, Kang
AU - Yang, Zhenzhong
AU - Hu, Dianyi
AU - Lai, Zhuangchai
AU - Li, Bing
AU - Xiong, Qihua
AU - Zhang, Qing
AU - Gu, Lin
AU - Zhang, Hua
N1 - Funding Information:
Dr. K. Zhang, Prof. Q. Zhang School of Electrical and Electronic Engineering Nanyang Technological University Singapore 639798, Singapore Dr. Z. Yang, Prof. L. Gu Beijing National Laboratory for Condensed Matter Physics Institute of Physics, Chinese Academy of Sciences Beijing 100190, China Dr. B. Li Institute of Materials Research and Engineering A*STAR (Agency for Science, Technology and Research) 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Singapore Prof. H. Zhang Department of Chemistry City University of Hong Kong Kowloon, Hong Kong, China E-mail: [email protected] Figure 1. a) Schematic illustration of 1T′-MoS2 structure. b) STEM image of a typical single-layer 1T′-MoS2 nanosheet. The bright dots indicate the Mo atoms. c) XPS spectrum of 1T′-MoS2. d) XRD patterns for 1T′-MoS2.
Funding Information:
G.-H.N. and Q.H. contributed equally to this work. This work was supported by MOE under AcRF Tier 2 (MOE2015-T2-2-057, MOE2016-T2-2-103, MOE2017-T2-1-162) and AcRF Tier 1 (2017-T1-001-150, 2017-T1-002-119), and NTU under Start-Up Grant (M4081296.070.500000) in Singapore. The authors acknowledge the Facility for Analysis, Characterization, Testing and Simulation, Nanyang Technological University, Singapore, for use of their electron microscopy (and/or X-ray) facilities. H.Z. thanks the support from ITC via Hong Kong Branch of National Precious Metals Material Engineering Research Center, and the Start-Up Grant from City University of Hong Kong.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/5/24
Y1 - 2019/5/24
N2 - Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T′), and trigonal prismatic (2H) phases. Among these, the 1T′ phase offers unique properties and advantages in various applications. Moreover, the 1T′ phase consists of unique zigzag chains of the transition metals, giving rise to interesting in-plane anisotropic properties. Herein, the in-plane optical and electrical anisotropies of metastable 1T′-MoS2 layers are investigated by the angle-resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J1 and J2 peaks in the angle-resolved Raman spectra is a key characteristic of high-quality 1T′-MoS2 crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.
AB - Crystal phases play a key role in determining the physicochemical properties of a material. To date, many phases of transition metal dichalcogenides have been discovered, such as octahedral (1T), distorted octahedral (1T′), and trigonal prismatic (2H) phases. Among these, the 1T′ phase offers unique properties and advantages in various applications. Moreover, the 1T′ phase consists of unique zigzag chains of the transition metals, giving rise to interesting in-plane anisotropic properties. Herein, the in-plane optical and electrical anisotropies of metastable 1T′-MoS2 layers are investigated by the angle-resolved Raman spectroscopy and electrical measurements, respectively. The deconvolution of J1 and J2 peaks in the angle-resolved Raman spectra is a key characteristic of high-quality 1T′-MoS2 crystal. Moreover, it is found that its electrocatalytic performance may be affected by the crystal orientation of anisotropic material due to the anisotropic charge transport.
KW - anisotropy
KW - distorted octahedrals
KW - electrochemical microcells
KW - metastable phases
KW - transition metal dichalcogenides
UR - http://www.scopus.com/inward/record.url?scp=85064513475&partnerID=8YFLogxK
U2 - 10.1002/adma.201807764
DO - 10.1002/adma.201807764
M3 - Journal article
C2 - 30972852
AN - SCOPUS:85064513475
SN - 0935-9648
VL - 31
JO - Advanced Materials
JF - Advanced Materials
IS - 21
M1 - 1807764
ER -