Ge metal-oxide-semiconductor capacitor with HfTiON/TaYON stacked gate dielectric treated by fluorine plasma is fabricated, and its interfacial and electrical properties are compared with its counterparts without the TaYON interfacial passivation layer or the fluorine-plasma treatment. Experimental results show that the sample exhibits excellent performances: low interface-state density (2.5× 1011 cm-2 eV -1), small flatband voltage (0.34 V), good capacitance-voltage behavior, small frequency dispersion, and low gate leakage current (2.47 × 10-5 A/cm2 at Vg = Vfb + 1V). These should be attributed to the suppressed growth of unstable Ge oxides on the Ge surface during gate dielectric annealing by the TaYON interlayer and fluorine incorporation, thus greatly reducing the defective states at/near the TaYON/Ge interface and improving the electrical properties of the device.
- Fluorine-plasma treatment
- Ge metal-oxide-semiconductor (MOS)
- interface properties
- TaYON passivation layer
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering