Improvement of pentacene organic thin-film transistor by using fluorine plasma-treated or ion-implanted HfO as gate dielectric

Chuan Yu Han, Wing Man Tang, P. T. Lai

Research output: Chapter in book / Conference proceedingConference article published in proceeding or bookAcademic researchpeer-review

Abstract

Improvement in the performance of pentacene organic thin-film transistor has been demonstrated by using fluorine plasma-treated or ion-implanted HfO as its gate dielectric. The carrier mobility of the OTFT on HfO with 900-s plasma treatment can reach a carrier mobility of 0.662 cm2/Vs, about 7 times higher than that of the control sample without fluorine incorporation. The reason is larger pentacene grains due to trap passivation, smoother surface and higher surface energy. On the other hand, the carrier mobility of the OTFT on HfO with a fluorine implant dose of (1 ×10)14/cm2 is improved to 0.251 cm2/Vs, about 2.7 times higher than that of the control sample. The smoother surface of the gate dielectric with fluorine implant results in the growth of larger pentacene grains, leading to an increase of carrier mobility. However, excessive fluorine implant dose or plasma treatment time could cause damage to the gate dielectric, thus decreasing the carrier mobility of the device.

Original languageEnglish
Title of host publication2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728102863
DOIs
Publication statusPublished - 1 Jun 2019
Event2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019 - Xi'an, China
Duration: 12 Jun 201914 Jun 2019

Publication series

Name2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019

Conference

Conference2019 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2019
CountryChina
CityXi'an
Period12/06/1914/06/19

Keywords

  • Fluorine plasma treatment
  • HfO
  • Ion-implantation
  • Organic thin-film transistors

ASJC Scopus subject areas

  • Signal Processing
  • Electrical and Electronic Engineering
  • Instrumentation

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