Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang Jing Zhuo; Jun Zhang; Dan Wei Li; Zhi Wei Ren; Han Xiang Yi; Xing Fu Wang; Jin Hui Tong; Xin Chen; Bi Jun Zhao; Wei Li Wang; Shu Ti Li

doi:10.1007/s10854-014-2149-y

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang Jing Zhuo, Jun Zhang, Dan Wei Li, Zhi Wei Ren, Han Xiang Yi, Xing Fu Wang, Jin Hui Tong, Xin Chen, Bi Jun Zhao, Wei Li Wang, Shu Ti Li

Department of Electrical and Electronic Engineering

Research output: Journal article publication › Journal article › Academic research › peer-review

2 Citations (Scopus)

Abstract

The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N₂) as cyclopentadienyl magnesium (Cp₂Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N₂ and the injection time of N₂. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

Original language	English
Pages (from-to)	4200-4205
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/s10854-014-2149-y
Publication status	Published - Oct 2014

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-014-2149-y

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Zhuo, X. J., Zhang, J., Li, D. W., Ren, Z. W., Yi, H. X., Wang, X. F., Tong, J. H., Chen, X., Zhao, B. J., Wang, W. L., & Li, S. T. (2014). Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface. Journal of Materials Science: Materials in Electronics, 25(10), 4200-4205. https://doi.org/10.1007/s10854-014-2149-y

@article{b41feec47e08423c9c75e91bb8f4b791,

title = "Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface",

abstract = "The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N2) as cyclopentadienyl magnesium (Cp2Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N2 and the injection time of N2. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.",

author = "Zhuo, {Xiang Jing} and Jun Zhang and Li, {Dan Wei} and Ren, {Zhi Wei} and Yi, {Han Xiang} and Wang, {Xing Fu} and Tong, {Jin Hui} and Xin Chen and Zhao, {Bi Jun} and Wang, {Wei Li} and Li, {Shu Ti}",

note = "Funding Information: Acknowledgments This work was supported by the National Nature Science Foundation of China (Grant 51172079), the Science and Technology Program of Guangdong Province, China (Grant 2010B0 90400456, 2009B011100003, and 2010A081002002), the Science and Technology Program of Guangzhou City, China (Grant 2010U1-D00191 and 11A52091257), the Program for Changjiang Scholars and Innovative Research Team in University, Project No. IRT13064, and the NationalHigh Technology Research and Development Programs of China (2013AA03A101). Publisher Copyright: {\textcopyright} 2014, Springer Science+Business Media New York.",

year = "2014",

month = oct,

doi = "10.1007/s10854-014-2149-y",

language = "English",

volume = "25",

pages = "4200--4205",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "10",

}

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface. / Zhuo, Xiang Jing; Zhang, Jun; Li, Dan Wei et al.
In: Journal of Materials Science: Materials in Electronics, Vol. 25, No. 10, 10.2014, p. 4200-4205.

Research output: Journal article publication › Journal article › Academic research › peer-review

TY - JOUR

T1 - Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

AU - Zhuo, Xiang Jing

AU - Zhang, Jun

AU - Li, Dan Wei

AU - Ren, Zhi Wei

AU - Yi, Han Xiang

AU - Wang, Xing Fu

AU - Tong, Jin Hui

AU - Chen, Xin

AU - Zhao, Bi Jun

AU - Wang, Wei Li

AU - Li, Shu Ti

N1 - Funding Information: Acknowledgments This work was supported by the National Nature Science Foundation of China (Grant 51172079), the Science and Technology Program of Guangdong Province, China (Grant 2010B0 90400456, 2009B011100003, and 2010A081002002), the Science and Technology Program of Guangzhou City, China (Grant 2010U1-D00191 and 11A52091257), the Program for Changjiang Scholars and Innovative Research Team in University, Project No. IRT13064, and the NationalHigh Technology Research and Development Programs of China (2013AA03A101). Publisher Copyright: © 2014, Springer Science+Business Media New York.

PY - 2014/10

Y1 - 2014/10

N2 - The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N2) as cyclopentadienyl magnesium (Cp2Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N2 and the injection time of N2. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

AB - The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N2) as cyclopentadienyl magnesium (Cp2Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N2 and the injection time of N2. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

UR - http://www.scopus.com/inward/record.url?scp=84939885986&partnerID=8YFLogxK

U2 - 10.1007/s10854-014-2149-y

DO - 10.1007/s10854-014-2149-y

M3 - Journal article

AN - SCOPUS:84939885986

SN - 0957-4522

VL - 25

SP - 4200

EP - 4205

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

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