Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang Jing Zhuo, Jun Zhang, Dan Wei Li, Zhi Wei Ren, Han Xiang Yi, Xing Fu Wang, Jin Hui Tong, Xin Chen, Bi Jun Zhao, Wei Li Wang, Shu Ti Li

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)


The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N2) as cyclopentadienyl magnesium (Cp2Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N2 and the injection time of N2. Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current–voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

Original languageEnglish
Pages (from-to)4200-4205
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Issue number10
Publication statusPublished - Oct 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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