Abstract
Oxygen diffusion at the SrTi O3 Si interface was analyzed. A method called temperature gradient modulation growth was introduced to control oxygen diffusion at the interface of SrTi O3 Si. Nanoscale multilayers were grown at different temperatures at the initial growing stage of films. Continuous growth of SrTi O3 films was followed to deposit on the grown sacrificial layers. The interface and crystallinity of SrTi O3 Si were investigated by in situ reflection high energy electron diffraction and x-ray diffraction measurements. It has been shown that the modulated multilayers may help suppress the interfacial diffusion, and therefore improve SrTi O3 thin film properties.
Original language | English |
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Article number | 131902 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 13 |
DOIs | |
Publication status | Published - 5 Oct 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)