Improvement of ATO electrode stability by doping with a trace amount of Ir

Xueming Chen, Guohua Chen

Research output: Journal article publicationJournal articleAcademic researchpeer-review

2 Citations (Scopus)

Abstract

Antimony-doped tin oxide (ATO) thin films were prepared on titanium substrates using a thermal decomposition technique. Their stability improved by 9 times when doped with 0.1 mol % of iridium. A service life of 112 h was obtained under a current density of 1000 A/m2in 1 M H2SO4solution. Cyclic voltammograms show that the Ir-doped ATO behaves similarly to conventional ATO with an ideal polarizable nature of the solid-electrolyte interface. Good linearity was observed for potential vs. logarithmic current density. The redox reaction of the [Fe(CN)6]3-/[Fe(CN)6]4-couple on the Ti/ATO electrode is nearly reversible.
Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume7
Issue number9
DOIs
Publication statusPublished - 18 Oct 2004
Externally publishedYes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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