Antimony-doped tin oxide (ATO) thin films were prepared on titanium substrates using a thermal decomposition technique. Their stability improved by 9 times when doped with 0.1 mol % of iridium. A service life of 112 h was obtained under a current density of 1000 A/m2in 1 M H2SO4solution. Cyclic voltammograms show that the Ir-doped ATO behaves similarly to conventional ATO with an ideal polarizable nature of the solid-electrolyte interface. Good linearity was observed for potential vs. logarithmic current density. The redox reaction of the [Fe(CN)6]3-/[Fe(CN)6]4-couple on the Ti/ATO electrode is nearly reversible.
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 18 Oct 2004|
ASJC Scopus subject areas
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering