Abstract
In this paper, an improved Tetramethyl Ammonium Hydroxide (TMAH) etching method is reported. The process features higher silicon etching rate and resulting in smooth silicon surface and at the same time, no significant aluminum etching is observed. We believe that after TMAH etching the aluminum surface are protected by the coating of by-products, which prevents etching the underlying aluminum films by the TMAH solution. The etchant used in the study consists of 5 wt.% TMAH solution, 1.4 wt.% (or above) dissolved silicon, and 0.4-0.7 wt.% (NH4)2S2O8 oxidant additive. Silicon etching rate of 0.9-1.0 μm/min and zero aluminum etching rate is be achieved using the process. Moreover the silicon surface remains smooth after etching. The etching process demonstration in this work is readily applicable to MEMS device fabrication such as removing polysilicon like sacrificial layer removal after metallization is completed.
Original language | English |
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Title of host publication | Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS) |
Publisher | IEEE |
Pages | 562-567 |
Number of pages | 6 |
Publication status | Published - 1 Jan 2000 |
Externally published | Yes |
Event | 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) - Miyazaki, Japan Duration: 23 Jan 2000 → 27 Jan 2000 |
Conference
Conference | 13th Annual International Conference on Micro Electro Mechanical Systems (MEMS 2000) |
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Country/Territory | Japan |
City | Miyazaki |
Period | 23/01/00 → 27/01/00 |
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering
- Mechanical Engineering