Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride

Doris K.T. Ng; Tantan Zhang; Li Yan Siow; Linfang Xu; Chong Pei Ho; Hong Cai; Lennon Y.T. Lee; Qingxin Zhang; Navab Singh

doi:10.1109/MEMS51782.2021.9375145

Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride

Doris K.T. Ng, Tantan Zhang, Li Yan Siow, Linfang Xu, Chong Pei Ho, Hong Cai, Lennon Y.T. Lee, Qingxin Zhang, Navab Singh

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

4 Citations (Scopus)

Abstract

CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of 200oC. The results show D∗ as high as 4.3 x 10 (cm√Hz)/W and NEP as low as 1.26 x 10-9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D∗ in the range of 105-106, Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.

Original language	English
Title of host publication	34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	860-863
Number of pages	4
ISBN (Electronic)	9781665419123
DOIs	https://doi.org/10.1109/MEMS51782.2021.9375145
Publication status	Published - 25 Jan 2021
Externally published	Yes
Event	34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021 - Virtual, Gainesville, United States Duration: 25 Jan 2021 → 29 Jan 2021

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2021-January
ISSN (Print)	1084-6999

Conference

Conference	34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021
Country/Territory	United States
City	Virtual, Gainesville
Period	25/01/21 → 29/01/21

Keywords

CMOS-MEMS
pyroelectric detector
Scandium Aluminum nitride

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

More information

10.1109/MEMS51782.2021.9375145

Cite this

Ng, D. K. T., Zhang, T., Siow, L. Y., Xu, L., Ho, C. P., Cai, H., Lee, L. Y. T., Zhang, Q., & Singh, N. (2021). Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. In 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021 (pp. 860-863). Article 9375145 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2021-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MEMS51782.2021.9375145

Ng, Doris K.T. ; Zhang, Tantan ; Siow, Li Yan et al. / Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 860-863 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{94c864a3780e4631a637af166b1ead90,

title = "Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride",

abstract = "CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of 200oC. The results show D∗ as high as 4.3 x 10 (cm√Hz)/W and NEP as low as 1.26 x 10-9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D∗ in the range of 105-106, Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.",

keywords = "CMOS-MEMS, pyroelectric detector, Scandium Aluminum nitride",

author = "Ng, {Doris K.T.} and Tantan Zhang and Siow, {Li Yan} and Linfang Xu and Ho, {Chong Pei} and Hong Cai and Lee, {Lennon Y.T.} and Qingxin Zhang and Navab Singh",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021 ; Conference date: 25-01-2021 Through 29-01-2021",

year = "2021",

month = jan,

day = "25",

doi = "10.1109/MEMS51782.2021.9375145",

language = "English",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "860--863",

booktitle = "34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021",

}

Ng, DKT, Zhang, T, Siow, LY, Xu, L, Ho, CP, Cai, H, Lee, LYT, Zhang, Q & Singh, N 2021, Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. in 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021., 9375145, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2021-January, Institute of Electrical and Electronics Engineers Inc., pp. 860-863, 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021, Virtual, Gainesville, United States, 25/01/21. https://doi.org/10.1109/MEMS51782.2021.9375145

Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. / Ng, Doris K.T.; Zhang, Tantan; Siow, Li Yan et al.
34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 860-863 9375145 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2021-January).

Research output: Chapter in book / Conference proceeding › Conference article published in proceeding or book › Academic research › peer-review

TY - GEN

T1 - Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride

AU - Ng, Doris K.T.

AU - Zhang, Tantan

AU - Siow, Li Yan

AU - Xu, Linfang

AU - Ho, Chong Pei

AU - Cai, Hong

AU - Lee, Lennon Y.T.

AU - Zhang, Qingxin

AU - Singh, Navab

PY - 2021/1/25

Y1 - 2021/1/25

N2 - CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of 200oC. The results show D∗ as high as 4.3 x 10 (cm√Hz)/W and NEP as low as 1.26 x 10-9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D∗ in the range of 105-106, Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.

AB - CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of 200oC. The results show D∗ as high as 4.3 x 10 (cm√Hz)/W and NEP as low as 1.26 x 10-9 W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D∗ in the range of 105-106, Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications.

KW - CMOS-MEMS

KW - pyroelectric detector

KW - Scandium Aluminum nitride

UR - http://www.scopus.com/inward/record.url?scp=85103452086&partnerID=8YFLogxK

U2 - 10.1109/MEMS51782.2021.9375145

DO - 10.1109/MEMS51782.2021.9375145

M3 - Conference article published in proceeding or book

AN - SCOPUS:85103452086

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 860

EP - 863

BT - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021

Y2 - 25 January 2021 through 29 January 2021

ER -

Ng DKT, Zhang T, Siow LY, Xu L, Ho CP, Cai H et al. Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride. In 34th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 860-863. 9375145. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)). doi: 10.1109/MEMS51782.2021.9375145

Improved Specific Detectivity to 10 for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride

Abstract

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Keywords

ASJC Scopus subject areas

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